Hardware

Magnetic domain wall devices closer to industrial reality

Magnetic domain wall devices have attracted great attention as a promising beyond-CMOS device concept for functional scaling. The spintronics-based technology could provide a platform where both logic and memory might connect, ...

Electronics & Semiconductors

One material with two functions could lead to faster memory

In a step toward a future of higher performance memory devices, researchers from National Taiwan Normal University and Kyushu University have developed a new device that needs only a single semiconductor known as perovskite ...

Electronics & Semiconductors

Perovskite memory devices with ultra-fast switching speed

A research team led by Professor Jang-Sik Lee of Pohang University of Science and Technology (POSTECH) has successfully developed the halide perovskite-based memory with ultra-fast switching speed. The findings from this ...

Hardware

High-speed 3-D memory with ferroelectric NAND flash memory

Ferroelectric memory is a well-researched topic in the past decade due to its capacity for higher speed, lower power consumption and longer endurance, compared to conventional flash memory. The performance of ferroelectric ...

Electronics & Semiconductors

Lower current leads to highly efficient memory

Researchers are a step closer to realizing a new kind of memory that works according to the principles of spintronics which is analogous to, but different from, electronics. Their unique gallium arsenide-based ferromagnetic ...

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