Electronics & Semiconductors

World's first MRAM-based in-memory computing

Samsung Electronics today announced its demonstration of the world's first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). The paper on this innovation was published online by Nature on January ...

Hardware

Magnetic domain wall devices closer to industrial reality

Magnetic domain wall devices have attracted great attention as a promising beyond-CMOS device concept for functional scaling. The spintronics-based technology could provide a platform where both logic and memory might connect, ...

Engineering

Scalable manufacturing of integrated optical frequency combs

A collaboration between EPFL and UCSB has developed a long-anticipated breakthrough, and demonstrated CMOS technology—used for building microprocessors and memory chips—that allows wafer-scale manufacturing of chip-scale ...

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