"The atomically flat 2D insulator hBN is a key material for the integration of 2D materials into electronic devices," Hiroki Ago, one of the researchers who carried out the study, told Tech Xplore. "For example, the highest carrier mobility in monolayer graphene is achieved only when it is sandwiched by multilayer hBN. Superconductivity observed in twisted bilayer graphene also needs multilayer hBN to isolate from environment."

In addition to its value for fabricating graphene-based devices, hBN can also be used to integrate transition metal dichalcogenides (TMDs) in devices, achieving strong photoluminescence and high carrier mobility. It can also be valuable for conducting studies focusing on moiré physics.

Despite its many possible uses, so far the synthesis of high-quality hBN has proved to be challenging, particularly compared to the synthesis of other 2D materials. The hBN produced using existing methods are generally too thin or not homogenous.