14/03/2022

Electronics & Semiconductors

Creating sub-1-nm gate lengths for MoS2 transistors

A team of researchers working at Tsinghua University in China has created a sub-1-nm gate in a MoS2 transistor. In their paper published in the journal Nature, the group outlines how they created the super tiny gate and explains ...

Energy & Green Tech

Revealing thermal runaway routes in lithium-sulfur batteries

Lithium-sulfur (Li-S) batteries offer great potential for use in energy storage systems because of their large energy capacity. However, safety problems related to their thermal behavior continue to be a concern for scientists.

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