First steps towards revolutionary ULTRARAM memory chips
ULTRARAM has taken a step closer towards development with a successful experiment by Lancaster physicists.
Mar 29, 2021
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ULTRARAM has taken a step closer towards development with a successful experiment by Lancaster physicists.
Mar 29, 2021
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As we enter the era of superintelligence and hyper-connected Fourth Industrial Revolution, the importance of high-density and high-performance memory is greater than ever. Currently, the most widely used NAND flash memory ...
Jan 19, 2021
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The National Institute for Materials Science (NIMS) has developed a memory device capable of storing multiple values using both optical and voltage input values. This device composed of layered two-dimensional materials is ...
Sep 11, 2020
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A team of scientists has taken steps to create a new form of digital data storage, a "Racetrack Memory," which opens the possibility to both bolster computer power and lead to the creation of smaller, faster, and more energy ...
May 5, 2020
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Researchers at Tohoku University have announced the demonstration of a high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.
Dec 9, 2019
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MIT researchers have designed a novel flash-storage system that could cut in half the energy and physical space required for one of the most expensive components of data centers: data storage.
Apr 3, 2019
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"Terabyte hard drives were only for, like, space stations," said Senior Editor for Geek.com, Jordan Minor, recalling when he was kid and thought that "a terabyte was such a huge, incalculable amount of space that surely no ...
Most modern websites store data in databases, and since database queries are relatively slow, most sites also maintain so-called cache servers, which list the results of common queries for faster access. A data center for ...
Aug 31, 2017
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(Tech Xplore)—Memory tech is in the April spotlight in the form of Intel's new Optane solid state drive.
Flash memory is a non-volatile computer memory that can be electrically erased and reprogrammed. It is a technology that is primarily used in memory cards and USB flash drives for general storage and transfer of data between computers and other digital products. It is a specific type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that is erased and programmed in large blocks; in early flash the entire chip had to be erased at once. Flash memory costs far less than byte-programmable EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid state storage is needed. Example applications include PDAs (personal digital assistants), laptop computers, digital audio players, digital cameras and mobile phones. It has also gained popularity in the game console market, where it is often used instead of EEPROMs or battery-powered SRAM for game save data.
Since flash memory is non-volatile, no power is needed to maintain the information stored in the chip. In addition, flash memory offers fast read access times (although not as fast as volatile DRAM memory used for main memory in PCs) and better kinetic shock resistance than hard disks. These characteristics explain the popularity of flash memory in portable devices. Another feature of flash memory is that when packaged in a "memory card," it is enormously durable, being able to withstand intense pressure, extremes of temperature, and even immersion in water.
Although technically a type of EEPROM, the term "EEPROM" is generally used to refer specifically to non-flash EEPROM which is erasable in small blocks, typically bytes. Because erase cycles are slow, the large block sizes used in flash memory erasing give it a significant speed advantage over old-style EEPROM when writing large amounts of data.
This text uses material from Wikipedia, licensed under CC BY-SA