Hardware
Researchers at Tohoku University have announced the demonstration of a high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.
Dec 9, 2019
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9
Engineering
High energy arcing faults are high-power electrical discharges between two or more conductors that can release tens of thousands of amps of current. They can result in explosions that reach about 35,000 degrees Celsius—about ...
Dec 5, 2019
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2
Engineering
A new power saving chip developed by engineers at the University of California San Diego could significantly reduce or eliminate the need to replace batteries in Internet of Things (IoT) devices and wearables. The so-called ...
Nov 12, 2019
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230
The art of croissant making has inspired researchers from Queen Mary University of London to find a solution to a sustainable energy problem.
Oct 18, 2019
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Energy & Green Tech
They are omnipresent and essential to navigating modern life. Small, light, rechargeable: lithium ion batteries have revolutionised our world in less than three decades.
Oct 9, 2019
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227
Engineering
Aerospace manufacturers, industries, and government agencies like the design freedom and convenience afforded from additive manufacturing—a process similar to 3-D printing. But do these parts have the same properties, especially ...
Oct 7, 2019
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3
Energy & Green Tech
What's not to like about this concept: high-efficiency solar cells gifting electric cars with mileage.
Engineering
McMaster researchers, working with partners at other universities, have created a motion-powered, fireproof sensor that can track the movements of firefighters, steelworkers, miners and others who work in high-risk environments ...
Mar 1, 2019
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119
Energy & Green Tech
In remote areas of the world or in regions with limited resources, everyday items like electrical outlets and batteries are luxuries. Health care workers in these areas often lack electricity to power diagnostic devices, ...
Aug 19, 2018
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65
Electronics & Semiconductors
Fujitsu Limited and Fujitsu Laboratories Ltd. today announced that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively ...
Aug 10, 2018
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