Electronics & Semiconductors

A new transverse tunneling field-effect transistor

Researchers at the Chinese Academy of Sciences have recently fabricated a transverse tunneling field-effect transistor. This is a semiconductor device that can be used to amplify or switch electrical power or signals, operating ...

Electronics & Semiconductors

Fujitsu triples the output power of gallium-nitride transistors

Fujitsu Limited and Fujitsu Laboratories Ltd. today announced that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively ...

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