Engineering
Silicon is one of the most abundant elements on Earth, and in its pure form the material has become the foundation of much of modern technology, from solar cells to computer chips. But silicon's properties as a semiconductor ...
Jul 21, 2022
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Engineering
Researchers at the Professorship of Electrical Energy Conversion Systems and Drives at Chemnitz University of Technology have succeeded for the first time in 3D printing housings for power electronic components that are used, ...
Jul 6, 2022
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137
Electronics & Semiconductors
Using a new fabrication technique, NIMS has developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET also exhibits normally ...
Feb 24, 2022
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Electronics & Semiconductors
People love their electric cars. But not so much the bulky batteries and related power systems that take up precious cargo space.
May 29, 2020
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Energy & Green Tech
Researchers have been looking into silicon carbide, a promising alternative material for the semiconductor industry, for several years now. The Fraunhofer Institute for Reliability and Microintegration IZM joined forces with ...
Oct 1, 2019
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Engineering
The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The newly developed ß-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown ...
Aug 27, 2019
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Electronics & Semiconductors
How do you pack more power into an electric car?
Aug 28, 2018
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383
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with a chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics which are widely used in applications requiring high endurance, such as car brakes and ceramic plates in bulletproof vests. Electronic applications of silicon carbide as light emitting diode and detector in early radios have been demonstrated around 1907, and nowadays SiC is widely used in high-temperature semiconductor electronics. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as "synthetic moissanite". Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
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