Engineering
NIMS has developed low-temperature-catalyzed, solution-processed SiO2 (LCSS), which subsequently enabled printing of high-performance thin-film transistors (TFTs) and three-dimensional circuits connecting various elements. ...
Jun 23, 2021
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Electronics & Semiconductors
Researchers at Osaka University demonstrated a new technique for modifying the hydrogen concentration of resistors by applying an electrical voltage. The generated electric field drove the diffusion of hydrogen ions deeper ...
Dec 9, 2020
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Engineering
The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The newly developed ß-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown ...
Aug 27, 2019
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Engineering
A new, smart medium-voltage transformer developed at ETH Zurich features cutting-edge semiconductor technology, making it extremely compact and energy efficient. Future applications are ranging from locomotives to fast charging ...
Sep 24, 2018
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Energy & Green Tech
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Feb 15, 2018
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